MCA3703 document number 5519 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v ds drain source voltage i d continuous drain current i d @ t c = 100c continuous drain current i dm pulsed drain current * v gs gate source voltage p d maximum power dissipation r jc thermal resistance junction to case t j, t stg operating and storage temperature range 100v 1a 0.6a 4a 20v 3.5w 35.7c/w -55 to +150c mechanical data dimensions in mm (inches) quad n?channel enhancement mosfets absolute maximum ratings for each chip (t case = 25c unless otherwise stated) applications fast switching motor controls power supplies lcc18 ceramic package 8.89 (0.350) 1.27 (0.050) typ. 7.24 (0.285) 0.65 (0.025) typ. 2.54 (0.100) 1.14(0.045) typ 0.23 (0.009) rad. 18 plcs 0.30 (0.012) rad. 4 plcs 1.14 ? 0.15 (0.045 ? 0.006) 1.40 (0.055) nom. 1 15 2 3 4 5 6 7 8 9 10 11 12 13 14 16 17 18 pin 1 - drain 1 pin 4 - source 1 pin 7 - source 2 pin 10 - drain 3 pin 13 - gate 3 pin 16 - gate 4 pin 2 - n/c pin 5 - gate 2 pin 8 - n/c pin 11 - n/c pin 14 - source 4 pin 17 - n/c pin 3 - gate 1 pin 6 - n/c pin 9 - drain 2 pin 12 - source 3 pin 15 - n/c pin 18 - drain 4 features hermetic ceramic surface mount package lightweight military screening level options space quality levels options
parameter test conditions min. typ. max. unit v na a ? s ( ) pf nc ns a v ns c MCA3703 document number 5519 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. 100 2.0 4.0 100 -100 25 250 0.70 0.80 0.86 180 82 15 15 7.5 7.5 20 25 40 40 1.0 4.0 1.5 200 0.83 v gs = 0 i d = 1ma v ds = v gs i d = 250 a v gs = 20v v gs = -20v v ds = 80v. v gs =0 t c = 125c v gs = 10v i d = 0.6a v gs = 10v i d = 1.0a v ds = 15v i ds = 0.6a v gs = 0 v ds = 25v f = 1mhz v gs = 10v v ds = 50v i ds = 1.0a v dd = 50v i d = 1.0a r g = 24 ? (mosfet switching times are essentially independent of operating temperature.) modified mos power symbol showing the intergal p-n junction rectifier. i s = 1.0a v gs = 0 i f =1.0a t j = 25c d i / d t = 100a/ sv dd = 50v electrical characteristics for each chip (t case = 25c unless otherwise stated) drain ? source breakdown voltage gate threshold voltage gate ? source leakage forward gate ? source leakage reverse zero gate voltage drain current static drain source on-state resistance* forward transductance * input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain charge turn?on delay time rise time turn?off delay time fall time continuous source current body diode source current* (body diode) diode forward voltage * reverse recovery time reverse recovery charge bv dss v gs(th) i gssf i gssr i dss r ds(on) gfs c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr body? drain diode ratings & characteristics ? notes * pulse test: pulse width 300 s, ? 2%
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